20N60 MOSFET. Datasheet pdf. Equivalent

20n60 equivalent:Kind designator: 20n60

sort of transistor: mosfet

type of control channel: n -channel

maximum strength dissipation (pd): 416 w

most drain-source voltage 600 v

most gate-supply: 30 v

maximum drain contemporary identification: 20 a

maximum junction temperature (tj): 150 °c

upward thrust time (tr): one hundred thirty ns

drain-source capacitance (cd): 330 pf

most drain-source on-country resistance (rds): 0. 32 ohm

bundle: to-3p to-247 to-230
20n60 transistor equivalent substitute – mosfet move-reference search

20n60 equivalent

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20n60 equivalent
20n60 equivalent

20n60 datasheet (pdf)

1. Fqpf20n60 fqp20n60. Pdf size:450k _1

fqp20n60/fqpf20n60600v,20a n-channel mosfetgeneral description product summaryvds700v@150the fqp20n60 & fqpf20n60 were fabricatedusing a sophisticated high voltage mosfet procedure this is identity (at vgs=10v) 20adesigned to supply excessive ranges of overall performance and rds(on) (at vgs=10v).20n60 equivalent.

0. 2. Mgw20n60. Pdf length:246k _motorola

motorolaorder this documentsemiconductor technical databy mgw20n60d/ddesigner’s facts sheetmgw20n60dinsulated gate bipolar transistormotorola favored devicewith anti-parallel diode.20n60 equivalent.

0. 3. Mgp20n60urev0. Pdf size:120k _motorola

motorolaorder this documentsemiconductor technical databy mgp20n60u/dproduct previewmgp20n60uinsulated gate bipolar transistorn channel enhancement mode silicon gatethis insulated gat.20n60 equivalent.

zero. 4. Mgp20n60u. Pdf size:125k _motorola

motorolaorder this documentsemiconductor technical databy mgp20n60u/ddesigner’s statistics sheetmgp20n60uinsulated gate bipolar transistorn channel enhancement mode silicon gatethis insula

0. Five. Mgw20n60d. Pdf size:209k _motorola

motorolaorder this documentsemiconductor technical databy mgw20n60d/ddesigner’s information sheetmgw20n60dinsulated gate bipolar transistormotorola preferred devicewith anti-parallel diode

0. 6. Tk20n60w5. Pdf size:239k _toshiba

tk20n60w5mosfets silicon n-channel mos (dtmos)tk20n60w5tk20n60w5tk20n60w5tk20n60w51.20n60 equivalent. Applications1. Applications1. Applications1. Applications switching voltage regulators2. Features2. Features2. Features2. Functions(1) fast reverse recuperation time: trr = one hundred ten ns (typ.)(2) low drain-supply on-resistance: rds(on) = zero. 15 (typ.) through used to terrific junction str

0. 7. Tk20n60w. Pdf length:245k _toshiba

tk20n60wmosfets silicon n-channel mos (dtmos)tk20n60wtk20n60wtk20n60wtk20n60w1. Applications1. Applications1. Applications1. Packages switching voltage regulators2. Features2. Features2. Features2. Capabilities(1) low drain-supply on-resistance: rds(on) = 0. 13 (typ.) with the aid of used to splendid junction structure : dtmos(2) smooth to manipulate gate switching(3) en.20n60 equivalent.

zero. 8. Fgh20n60ufd. Pdf size:1073k _fairchild_semi

april 2011fgh20n60ufd600v, 20a area prevent igbtfeatures wellknown description high modern-day functionality using novel area stop igbt technology, fairchilds new seriesof field prevent igbts provide the best overall performance for induc- low saturation voltage: vce(sat) =1. 8v @ ic = 20ation heating, ups, smps and % programs in which low con- high enter impedanceduction and switc.20n60 equivalent,

0. Nine. Fch20n60 fca20n60 fca20n60 f109. Pdf size:971k _fairchild_semi

december 2008tmsuperfetfch20n60 / fca20n60 / fca20n60_f109600v n-channel mosfetfeatures description 650v @tj = 150c superfettm is, fairchilds proprietary, new era of highvoltage mosfet circle of relatives that is utilizing an advanced fee typ. Rds(on)=0. 15balance mechanism for great low on-resistance and ultra low gate charge (typ. Qg=55nc) decrease gate cha.20n60 equivalent.

 10. Hgtg20n60b3d. Pdf size:176k _fairchild_semi

hgtg20n60b3ddata sheet december 200140a, 600v, united states of americacollection n-channel igbt featureswith anti-parallel hyperfast diode 40a, 600v at tc = 25octhe hgtg20n60b3d is a mos gated excessive voltage common fall time. . . . . . . . . . . . . . . . . . . . 140ns at 150ocswitching device combining the excellent capabilities of mosfets brief circuit ratedand bipolar transistors. The device has

 11. Fcp20n60fs fcp20n60 fcpf20n60. Pdf size:1056k _fairchild_semi

december 2008 tmsuperfetfcp20n60 / fcpf20n60 600v n-channel mosfetfeatures description 650v @tj = 150c superfettm is, fairchilds proprietary, new technology of highvoltage mosfet circle of relatives that is using an advanced price typ. Rds(on) = 0. 15balance mechanism for amazing low on-resistance and ultra low gate fee (typ. Qg = 75nc) lower gate rate perfo

 12. Fcp20n60 fcpf20n60. Pdf size:613k _fairchild_semi

august 2014fcp20n60 / fcpf20n60n-channel superfet mosfet600 v, 20 a, 190 mfeatures descriptionsuperfet mosfet is fairchild semiconductors first genera- 650v @ tj = 150ction of high voltage superb-junction (sj) mosfet own family that is typ. Rds(on) = one hundred fifty m utilizing rate stability generation for exquisite low on- extremely low gate fee (typ. Qg = 75 nc )r

 Thirteen. Fcb20n60f f085. Pdf size:354k _fairchild_semi

december 2013fcb20n60f_f085n-channel mosfet600v, 20a, 190m ddfeatures typ rds(on) = 171m at vgs = 10v, identity = 20a typ qg(tot) = 78nc at vgs = 10v, id = 20ag united statescapability rohs compliantg qualified to aec q101 ssdescription superfettm is fairchilds proprietary new era of excessive voltage mosfets utilizing a sophisticated rate stability forcurrentpack

 14. Hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3. Pdf size:140k _fairchild_semi

hgtg20n60c3, hgtp20n60c3,hgt1s20n60c3sdata sheet december 200145a, 600v, united statescollection n-channel igbt featuresthis family of mos gated high voltage switching gadgets 45a, 600v, tc = 25occombining the satisfactory functions of mosfets and bipolar 600v switching soa capabilitytransistors. These gadgets have the high input impedance of normal fall time. . . . . . . . . . . . . ..

15. Fch20n60. Pdf length:965k _fairchild_semi

december 2008tmsuperfetfch20n60 / fca20n60 / fca20n60_f109600v n-channel mosfetfeatures description 650v @tj = 150c superfettm is, fairchilds proprietary, new technology of highvoltage mosfet own family that is utilizing an advanced fee typ. Rds(on)=zero. 15balance mechanism for brilliant low on-resistance and extremely low gate rate (typ. Qg=55nc) decrease gate cha

0. 16. Fcb20n60ftm. Pdf length:1144k _fairchild_semi

december 2008 tmsuperfetfcb20n60f600v n-channel frfetfeatures description 650v @ tj = 150c superfettm is,fairchild’ s proprietary, new technology of high voltage mosfet own family this is utilizing a complicated price typ. Rds(on)=zero. 15balance mechanism for incredible low on-resistance and rapid recovery kind ( trr = 160ns ) decrease gate fee overall performance. 20n60 equivalent.This a

 17. Hgtg20n60a4 hgtp20n60a4. Pdf size:136k _fairchild_semi

hgtg20n60a4, hgtp20n60a4data sheet december 2001600v, smps collection n-channel igbts featuresthe hgtg20n60a4 and hgtp20n60a4 are mos gated >100khz operation at 390v, 20ahigh voltage switching devices combining the fine capabilities 200khz operation at 390v, 12aof mosfets and bipolar transistors. 20n60 equivalent.Those devices have the 600v switching soa capabilityhigh input impedance of a

 18. Fca20n60s fca20n60s f109. Pdf size:750k _fairchild_semi

august 2007tmsuperfetfca20n60s / fca20n60s_f109600v n-channel mosfetfeatures description 650v @tj = 150c superfettm is, farichilds proprietary, new era of highvoltage mosfet circle of relatives that is utilizing a complicated fee typ. Rds(on)=0. 22balance mechanism for top notch low on-resistance and ultra low gate rate (typ. Qg=55nc) decrease gate price carry out.20n60 equivalent.

 19. Fcb20n60. Pdf length:964k _fairchild_semi

december 2008 tmsuperfetfcb20n60 600v n-channel mosfetfeatures description 650v @tj = 150c superfettm is, fairchilds proprietary, new era of highvoltage mosfet circle of relatives this is making use of an advanced charge typ. Rds(on) = zero. 15balance mechanism for exceptional low on-resistance and ultra low gate charge (typ. Qg = 75nc) lower gate fee performance.20n60 equivalent. Zero.

20. Fgh20n60sfd. Pdf length:791k _fairchild_semi

september 2008 fgh20n60sfdtm600v, 20a discipline stop igbtfeatures fashionable description high contemporary capability the use of novel field prevent igbt era, fairchilds new seriesof subject prevent igbts offer the top-rated performance for induction low saturation voltage: vce(sat) =2. 2v @ ic = 20aheating, ups, smps and percent programs where low conduc- high enter impedancetion an

 21. Sgh20n60rufd. Pdf length:632k _fairchild_semi

september 2000 igbtsgh20n60rufdshort circuit rated igbtgeneral description featuresfairchild’s insulated gate bipolar transistor(igbt) rufd quick circuit rated 10us @ tc = 100c, vge = 15vseries provides low conduction and switching losses as properly high pace switchingas brief circuit ruggedness. Rufd collection is designed for low saturation voltage : vce(sat) = 2. 2 v @

22. Fca20n60f fca20n60fs. Pdf size:952k _fairchild_semi

december 2008 tmsuperfetfca20n60f 600v n-channel frfetfeatures description 650v @tj = 150c superfettm is, fairchilds proprietary, new era of excessive voltage mosfet own family this is utilizing a sophisticated fee typ. Rds(on)=zero. 15balance mechanism for awesome low on-resistance and rapid healing kind ( trr = 160ns ) decrease gate charge overall performance. 20n60 equivalent.This a

zero. 23. Fgp20n60ufd. Pdf size:740k _fairchild_semi

october 2008fgp20n60ufdtm600v, 20a subject stop igbtfeatures popular description excessive contemporary capability using novel field forestall igbt era, fairchilds new seriesof discipline prevent igbts provide the most effective performance for induction low saturation voltage: vce(sat) =1. 8v @ ic = 20aheating, ups, smps and % applications in which low conduc- excessive enter impedancetion and s

0. 24. Fcd620n60zf. Pdf size:619k _fairchild_semi

november 2013fcd620n60zfn-channel superfet ii frfet mosfet600 v, 7. Three a, 620 mfeatures description 650 v @ tj = 150oc superfet ii mosfet is fairchild semiconductors brand-newhigh voltage awesome-junction (sj) mosfet circle of relatives this is using typ. Rds(on) = 528 mcharge balance generation for excellent low on-resistance extremely low gate fee (typ. Qg = 20 nc)

0. 25. Fca20n60 fca20n60 f109. Pdf size:481k _fairchild_semi

august 2014fca20n60n-channel superfet mosfet600 v, 20 a, one hundred ninety mfeatures descriptionsuperfet mosfet is fairchild semiconductors first genera- 650v @ tj = 150ction of high voltage wonderful-junction (sj) mosfet family that is typ. Rds(on) = 150 m utilising charge stability generation for outstanding low on- extremely low gate rate (typ. Qg = 75 nc )resistance an

0. 26. Hgtg20n60b3. Pdf length:194k _fairchild_semi

hgtg20n60b3data sheet october 200440a, 600v, u. S. Series n-channel igbts featuresthe hgtg20n60b3 is a generation iii mos gated excessive 40a, 600v at tc = 25ocvoltage switching gadgets combining the high-quality functions of 600v switching soa capabilitymosfets and bipolar transistors. Those devices have the everyday fall time. . . . . . . . . . . . . . . . . . . . 140ns at 150och

zero. 27. Fcb20n60 f085. Pdf length:363k _fairchild_semi

november 2013fcb20n60_f085n-channel mosfet600v, 20a, 198m ddfeatures typ rds(on) = 173m at vgs = 10v, identity = 20a typ qg(tot) = 72nc at vgs = 10v, identification = 20ag united states of americafunctionality rohs compliantg certified to aec q101 ssdescription superfettm is fairchilds proprietary new generation of high voltage mosfets utilising an advanced rate balance forcurrentpacka

zero. 28. Hgtg20n60a4d. Pdf size:148k _fairchild_semi

hgtg20n60a4ddata sheet february 2009600v, smps series n-channel igbt with featuresanti-parallel hyperfast diode >100khz operation at 390v, 20athe hgtg20n60a4d is a mos gated excessive voltage switching 200khz operation at 390v, 12adevice combining the high-quality functions of mosfets and bipolar 600v switching soa capabilitytransistors. 20n60 equivalent.This device has the excessive enter impedance o

zero. 29. Fcb20n60tm. Pdf length:956k _fairchild_semi

december 2008 tmsuperfetfcb20n60 600v n-channel mosfetfeatures description 650v @tj = 150c superfettm is, fairchilds proprietary, new technology of highvoltage mosfet circle of relatives that is making use of a complicated rate typ. Rds(on) = 0. 15balance mechanism for terrific low on-resistance and ultra low gate charge (typ. Qg = 75nc) lower gate price performance.20n60 equivalent. Zero.

30. Fcb20n60f. Pdf size:1152k _fairchild_semi

december 2008 tmsuperfetfcb20n60f600v n-channel frfetfeatures description 650v @ tj = 150c superfettm is,fairchild’ s proprietary, new generation of high voltage mosfet own family that is utilising an advanced price typ. Rds(on)=zero. 15balance mechanism for remarkable low on-resistance and rapid recovery type ( trr = 160ns ) lower gate charge performance. This a

0. 31. Sgw20n60ruf. Pdf size:231k _samsung

n-channel igbt sgw20n60ruffeaturesd2-pak* brief circuit rated 10us @tc=a hundred * excessive pace switching* low saturation voltage : vce(sat) = 2. Zero v @ ic=20a* excessive enter impedanceapplicationsc* ac & dc motor controls* preferred reason invertersg* robotics , servo controls* energy deliver* lamp ballast eabsolute maximum rankings image score unitscharacteristicsvce

0. 32. Sgh20n60rufd. Pdf length:270k _samsung

co-pak igbt sgh20n60rufdfeaturesto-3p* brief circuit rated 10us @tc=a hundred * excessive speed switching* low saturation voltage : vce(sat) = 2. 0 v @ ic=20a* excessive input impedance* co-pak, igbt with frd : trr = 50ns (typ)capplications* ac & dc motor controlsg* general cause inverters* robotics , servo controls* strength supply e* lamp ballastabsolute maximum ratings

0. 33. Sgp20n60ruf. Pdf length:231k _samsung

n-channel igbt sgp20n60ruffeaturesto-220* quick circuit rated 10us @tc=a hundred * excessive speed switching* low saturation voltage : vce(sat) = 2. 0 v @ ic=20a* excessive enter impedanceapplicationsc* ac & dc motor controls* preferred reason invertersg* robotics , servo controls* power deliver* lamp ballast eabsolute most scores image rating unitscharacteristicsvce

0. 34. Zds020n60. Pdf size:1149k _rohm

facts sheet10v pressure nch mosfetzds020n60 shape dimensions (unit : mm)sop8silicon n-channel mosfet(eight) (five)features1) low on-resistance. 2) high-pace switching.(1) (four)three) huge soa. Applicationswitching packaging specifications internal circuitpackage taping (8) (7) (6) (five)typecode tbbasic ordering unit (pieces) 2500zds020n60 (1) supply

0. 35. Rdd020n60. Pdf length:534k _rohm

data sheet10v pressure nch mosfet rdd020n60 structure dimensions (unit : mm)silicon n-channel mosfetcpt36. 5(sc-63)5. 12. 30. 5features1) low on-resistance. 2) high-pace switching. 0. 753) extensive variety of soa. Zero. 65(1) gate0. Nine 2. Three(1) (2) (three)four) force circuits can be easy. (2) drain 2. 3 0. 51. 0(3) source5) parallel use is easy. Applicati

zero. 36. Sgb20n60 . Pdf length:790k _infineon

sgb20n60 rapid igbt in npt-generation c seventy five% lower eoff as compared to previous era mixed with low conduction losses short circuit resist time 10 s g designed for: e- motor controls – inverter npt-technology for 600v packages gives: – very tight parameter distribution – high ruggedness, temperature solid behaviour pg-to-263-three-2 (d

zero. 37. Ikb20n60trev2 4g. Pdf length:1220k _infineon

ikb20n60t trenchstop series p low loss duopack : igbt in trenchstop and fieldstop era with soft, fast recovery anti-parallel emcon three diode c very low vce(sat) 1. Five v (typ.) maximum junction temperature a hundred seventy five c quick circuit resist time 5s ge designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners trench

zero. 38. Ikw20n60h3 rev1 2g. Pdf length:1642k _infineon

igbthigh speed duopack: igbt in trench and fieldstop technologywith smooth, speedy healing anti-parallel diodeikw20n60h3600v high pace switching series 1/3 generationdatasheetindustrial & multimarketikw20n60h3high pace switching collection 0. 33 generationhigh velocity duopack: igbt in trench and fieldstop technology with tender, fastrecovery anti-parallel diodecfeatures:tren

zero. 39. Igp20n60h3 rev1 2g. Pdf length:1611k _infineon

igbthigh velocity igbt in trench and fieldstop technologyigp20n60h3600v excessive pace switching collection 1/3 generationdatasheetindustrial & multimarketigp20n60h3high speed switching collection 0. 33 generationhigh speed igbt in trench and fieldstop technologyfeatures: ctrenchstoptm generation supplying very low vcesat low emi maximum junction temperature 175c g

0. Forty. Sgb20n60. Pdf length:787k _infineon

sgb20n60 fast igbt in npt-era c 75% decrease eoff in comparison to preceding technology mixed with low conduction losses short circuit face up to time 10 s g designed for: e- motor controls – inverter npt-era for 600v programs offers: – very tight parameter distribution – excessive ruggedness, temperature strong behaviour pg-to-263-three-2 (d

0. 41. Spp20n60s5. Pdf length:129k _infineon

spp20n60s5final dataspb20n60s5cool mos strength transistorvds 600 vfeaturerds(on) 0. 19 new modern excessive voltage technologyid 20 a international satisfactory rds(on) in to 220p-to263-3-2 p-to220-three-1 extremely low gate fee periodic avalanche rated intense dv/dt rated ultra low effective capacitances progressed noise immunitytype package deal ordering cod

0. 42. Igw20n60h3. Pdf size:1522k _infineon

igbthigh velocity igbt in trench and fieldstop technologyigw20n60h3600v excessive pace switching collection 1/3 generationdatasheetindustrial & multimarketigw20n60h3high velocity switching collection 0. 33 generationhigh velocity igbt in trench and fieldstop technologyfeatures: ctrenchstoptm technology offering very low vcesat low emi very gentle, fast restoration anti-parallel d

0. 43. Spb20n60c3. Pdf length:782k _infineon

vds tjmax g 3 g

zero. Forty four. Spb20n60s5. Pdf length:665k _infineon

spb20n60s5cool mos energy transistorvds600 vfeaturerds(on) 0. 19 new innovative high voltage technologyid 20 apg-to263 extremely low gate rate periodic avalanche rated excessive dv/dt rated extremely low powerful capacitances progressed transconductancetype bundle ordering code markingspb20n60s5 pg-to263 q67040-s4171 20n60s5maximum ratingspara

zero. 45. Spp20n60s5 . Pdf length:370k _infineon

spp20n60s5cool mos strength transistorvds600 vfeaturerds(on) 0. 19 new innovative excessive voltage technologyid 20 a worldwide first-class rds(on) in to 220pg-to220 extremely low gate charge2 periodic avalanche rated intense dv/dt rated321 ultra low powerful capacitancesp-to220-3-1 improved transconductancetype bundle ordering code marking

0. 46. Sgp20n60hs. Pdf size:352k _infineon

sgp20n60hs sgw20n60hshigh velocity igbt in npt-generation c 30% lower eoff as compared to previous technology brief circuit face up to time 10 s ge designed for operation above 30 khz npt-generation for 600v packages gives: – parallel switching functionality pg-to-220-three-1 pg-to-247-three – mild eoff growth with temperature – very tight parameter distri

0. 47. Ikb20n60t. Pdf size:697k _infineon

ikb20n60ttrenchstop series plow loss duopack : igbt in trenchstop and fieldstop era with gentle,speedy restoration anti-parallel emitter managed he diodefeatures:c very low vce(sat) 1. 5v (typ.) maximum junction temperature 175c quick circuit face up to time 5s designed for frequency inverters for washing machines, enthusiasts, pumps and vacuumgcleanerse

zero. 48. Ikb20n60h3. Pdf length:1491k _infineon

igbthigh pace duopack: igbt in trench and fieldstop technologywith gentle, speedy restoration anti-parallel diodeikb20n60h3600v high speed switching collection 0. 33 generationdatasheetindustrial & multimarketikb20n60h3high velocity switching collection 0. 33 generationhigh pace igbt in trench and fieldstop technologycfeatures:trenchstoptm era imparting very low vcesat

0. 49. Skw20n60hsg. Pdf size:346k _infineon

skw20n60hshigh velocity igbt in npt-era c 30% lower eoff in comparison to previous technology short circuit resist time 10 s ge designed for operation above 30 khz npt-technology for 600v programs gives: – parallel switching capability pg-to-247-three – slight eoff growth with temperature – very tight parameter distribution high ruggedness,

0. 50. Spp20n60c3 spi20n60c3 spa20n60c3 spp20n60c3 spi20n60c3 spa20n60c3 rev3. 2. Pdf size:683k _infineon

spp20n60c3spi20n60c3, spa20n60c3cool mos power transistorvds @ tjmax 650 vfeaturerds(on) 0. 19 new modern high voltage technologyid 20. 7 a global quality rds(on) in to 220pg-to220fp pg-to262 pg-to220 extremely low gate charge periodic avalanche rated3 excessive dv/dt rated21p-to220-3-31 excessive peak modern-day functionality progressed transco

0. Fifty one. Spw20n60c3. Pdf length:765k _infineon

vds tjmax g g-to247

0. 52. Ikw20n60h3. Pdf length:2118k _infineon

igbthigh speed duopack: igbt in trench and fieldstop technologywith tender, speedy healing anti-parallel diodeikw20n60h3600v excessive speed switching collection 0. 33 generationdata sheetindustrial energy controlikw20n60h3high speed switching collection 0. 33 generationhigh speed duopack: igbt in trench and fieldstop generation with tender, fastrecovery anti-parallel diodecfeatures:tre

0. Fifty three. Sgp20n60. Pdf length:359k _infineon

sgp20n60 sgw20n60fast igbt in npt-technology c seventy five% lower eoff as compared to previous generation mixed with low conduction losses short circuit face up to time 10 s g designed for: e- motor controls – inverter npt-era for 600v packages gives: – very tight parameter distribution – high ruggedness, temperature strong behaviour – paral

zero. 54. Skw20n60g. Pdf length:315k _infineon

skw20n60fast igbt in npt-technology with tender, fast recuperation anti-parallel emcon diode c 75% lower eoff in comparison to preceding generation blended with low conduction losses quick circuit resist time 10 s ge designed for: – motor controls – inverter npt-era for 600v packages offers: – very tight parameter distribution – excessive ruggedness,

zero. 55. Ikb20n60h3 rev1 1g. Pdf size:1537k _infineon

igbthigh velocity duopack: igbt in trench and fieldstop technologywith soft, speedy restoration anti-parallel diodeikb20n60h3600v excessive velocity switching series 1/3 generationdatasheetindustrial & multimarketikb20n60h3high speed switching collection 1/3 generationhigh velocity igbt in trench and fieldstop technologycfeatures:trenchstoptm generation imparting very low vcesat

zero. Fifty six. Sgp20n60 sgw20n60 rev2. Pdf size:331k _infineon

sgp20n60 sgw20n60fast igbt in npt-technology c seventy five% lower eoff in comparison to previous generation mixed with low conduction losses quick circuit resist time 10 s g designed for: e- motor controls – inverter npt-generation for 600v programs gives: – very tight parameter distribution – high ruggedness, temperature stable behaviour – paral

zero. Fifty seven. Igb20n60h3. Pdf size:733k _infineon

igbthigh pace igbt in trench and fieldstop technologyigb20n60h3600v excessive velocity switching collection 1/3 generationdatasheetindustrial & multimarketigb20n60h3high speed switching series third generationhigh velocity igbt in trench and fieldstop technologyfeatures: ctrenchstoptm technology presenting very low vcesat low emi most junction temperature 175c g

zero. Fifty eight. Sgp20n60 sgw20n60 rev2 4g. Pdf size:358k _infineon

sgp20n60 sgw20n60fast igbt in npt-era c 75% lower eoff in comparison to preceding technology combined with low conduction losses brief circuit withstand time 10 s g designed for: e- motor controls – inverter npt-era for 600v applications offers: – very tight parameter distribution – high ruggedness, temperature strong behaviour – paral

0. 59. Spw20n60cfd. Pdf size:2950k _infineon

please note the new package deal dimensions arccording to pcn 20091 4aplease observe the new package dimensions arccording to pcn 20091 4aplease be aware the new package dimensions arccording to pcn 20091 4aplease word the brand new package deal dimensions arccording to pcn 20091 4aplease be aware the new package dimensions arccording to pcn 20091 4aplease word the brand new package

zero. 60. Skw20n60. Pdf length:469k _infineon

skw20n60fast igbt in npt-era with tender, rapid recovery anti-parallel emitter controlleddiodec 75% decrease eoff in comparison to previous generationcombined with low conduction losses brief circuit face up to time 10 sge designed for:- motor controls- inverter npt-era for 600v packages gives:- very tight parameter distribution- high rugged

zero. Sixty one. Sgw20n60hs. Pdf length:383k _infineon

sgp20n60hs sgw20n60hshigh speed igbt in npt-technology c 30% lower eoff compared to preceding era brief circuit resist time 10 s ge designed for operation above 30 khz npt-technology for 600v packages gives: – parallel switching capability pg-to-220-3-1 pg-to-247-three – moderate eoff increase with temperature – very tight parameter distri

zero. Sixty two. Skw20n60hs. Pdf size:853k _infineon

skw20n60hshigh velocity igbt in npt-era c 30% decrease eoff in comparison to previous technology short circuit face up to time 10 s ge designed for operation above 30 khz npt-era for 600v applications offers: – parallel switching functionality pg-to-247-three-21 – mild eoff boom with temperature – very tight parameter distribution high ruggednes

zero. 63. Spi20n60cfd. Pdf length:554k _infineon

spi20n60cfdci mos pwer transistrvds @ tjmax 650 vfeaturerds(on) 0. 22 new progressive excessive voltage technologyid 20. 7 a global best rds(on) in to 220pg-to262 extremely low gate fee periodic avalanche rated extreme dv/dt rated excessive height present day functionality intrinsic fast-restoration frame diode excessive low reverse restoration chargequalifi

0. 64. Ikq120n60ta. Pdf length:2188k _infineon

igbtlow loss duopack : igbt in trenchstoptm and fieldstop technology with gentle, fast recovery antiparallel emitter managed diodeikq120n60ta600v low loss switching series 0. 33 generationdata sheetindustrial electricity controlikq120n60tatrenchstoptm serieslow loss duopack : igbt in trenchstoptm and fieldstop technologywith gentle, fast restoration antiparallel emitter managed di

zero. 65. Ikw20n60t. Pdf size:573k _infineon

ikw20n60ttrenchstop serieslow loss duopack : igbt in trenchstop and fieldstop era with smooth,rapid restoration anti-parallel emitter managed he diodecfeatures: very low vce(sat) 1. 5v (typ.) most junction temperature 175cg quick circuit withstand time 5se designed for :- frequency converters- uninterrupted strength deliver trenchstop a

0. 66. Igp20n60h3. Pdf length:2046k _infineon

igbthigh pace igbt in trench and fieldstop technologyigp20n60h3600v excessive speed switching collection 0. 33 generationdata sheetindustrial strength controligp20n60h3high speed switching series 0. 33 generationhigh speed igbt in trench and fieldstop technologyfeatures: ctrenchstoptm technology supplying very low flip-off electricity low vcesat low emi most junctio

0. 67. Igb20n60h3 rev1 1g. Pdf size:1454k _infineon

igbthigh speed igbt in trench and fieldstop technologyigb20n60h3600v excessive velocity switching collection third generationdatasheetindustrial & multimarketigb20n60h3high pace switching collection 0. 33 generationhigh velocity igbt in trench and fieldstop technologyfeatures: ctrenchstoptm generation offering very low vcesat low emi most junction temperature 175c g

zero. 68. Spw20n60s5. Pdf length:768k _infineon

spw20n60s5cool mos strength transistorvds600 vfeaturerds(on) zero. 19 new modern high voltage technologyid 20 a extremely low gate chargepg-to247 periodic avalanche rated severe dv/dt rated extremely low powerful capacitances progressed transconductancetype package deal ordering code markingspw20n60s5 pg-to247 q67040-s4238 20n60s5maximum ratingspara

0. Sixty nine. Sgw20n60. Pdf length:359k _infineon

sgp20n60 sgw20n60fast igbt in npt-technology c 75% lower eoff in comparison to preceding era blended with low conduction losses brief circuit resist time 10 s g designed for: e- motor controls – inverter npt-generation for 600v programs offers: – very tight parameter distribution – excessive ruggedness, temperature stable behaviour – paral

zero. 70. Sgp20n60hs sgw20n60hs rev2 5g. Pdf size:382k _infineon

sgp20n60hs sgw20n60hshigh velocity igbt in npt-technology c 30% decrease eoff compared to preceding era brief circuit resist time 10 s ge designed for operation above 30 khz npt-era for 600v packages gives: – parallel switching capability pg-to-220-three-1 pg-to-247-3 – mild eoff growth with temperature – very tight parameter distri

zero. 71. Ikp20n60h3g. Pdf size:1698k _infineon

igbthigh velocity duopack: igbt in trench and fieldstop technologywith gentle, fast restoration anti-parallel diodeikp20n60h3600v excessive pace switching series third generationdatasheetindustrial & multimarketikp20n60h3high pace switching collection third generationhigh velocity igbt in trench and fieldstop technologycfeatures:trenchstoptm technology presenting very low vcesat

0. Seventy two. Spa20n60cfd. Pdf size:466k _infineon

spa20n60cfdcoolmostm electricity transistorproduct summaryfeaturesv six hundred vds new innovative excessive voltage technologyr zero. 22 ds(on),max intrinsic rapid-healing body diode1)20. 7 useful resource extraordinarily low opposite recovery rate extremely low gate chargepg-to220-three-31 extreme dv /dt rated excessive top present day functionality periodic avalanche rated certified f

zero. 73. Sgp20n60hs sgw20n60hs rev2. Pdf length:354k _infineon

sgp20n60hs sgw20n60hshigh velocity igbt in npt-era c 30% lower eoff in comparison to previous technology quick circuit withstand time 10 s ge designed for operation above 30 khz npt-technology for 600v applications gives: – parallel switching functionality pg-to-220-three-1 pg-to-247-3 – mild eoff increase with temperature – very tight parameter distri

zero. 74. Ikp20n60t ikw20n60t rev2 5g. Pdf length:449k _infineon

ikp20n60t trenchstop series ikw20n60tlow loss duopack : igbt in trenchstop and fieldstop technology with soft, fast recovery anti-parallel emcon he diode c very low vce(sat) 1. 5 v (typ.) most junction temperature one hundred seventy five c quick circuit withstand time 5s ge designed for : – frequency converters – uninterrupted power deliver trenchstop an

0. Seventy five. Ikp20n60t. Pdf size:561k _infineon

ikp20n60ttrenchstop serieslow loss duopack : igbt in trenchstop and fieldstop era with gentle,speedy restoration anti-parallel emitter managed he diodecfeatures: very low vce(sat) 1. 5v (typ.) maximum junction temperature 175cg quick circuit withstand time 5se designed for :- frequency converters- uninterrupted electricity deliver trenchstop a

zero. Seventy six. Spp20n60cfd. Pdf size:643k _infineon

spp20n60cfdci mos pwer transistrvds @ tjmax 650 vfeaturerds(on) zero. 22 new innovative excessive voltage technologyid 20. 7 a international pleasant rds(on) in to 220pg-to220 extremely low gate charge periodic avalanche rated extreme dv/dt rated excessive peak present day functionality intrinsic rapid-healing frame diode extreme low reverse recuperation chargetype pa

zero. Seventy seven. Igw20n60h3 rev1 1g. Pdf length:1562k _infineon

igbthigh pace igbt in trench and fieldstop technologyigw20n60h3600v excessive velocity switching collection 1/3 generationdatasheetindustrial & multimarketigw20n60h3high velocity switching series 1/3 generationhigh speed igbt in trench and fieldstop technologyfeatures: ctrenchstoptm technology offering very low vcesat low emi very gentle, rapid restoration anti-parallel d

0. Seventy eight. Ikp20n60h3. Pdf length:1648k _infineon

igbthigh pace duopack: igbt in trench and fieldstop technologywith smooth, speedy recuperation anti-parallel diodeikp20n60h3600v excessive velocity switching series 0. 33 generationdatasheetindustrial & multimarketikp20n60h3high pace switching series 0. 33 generationhigh pace igbt in trench and fieldstop technologycfeatures:trenchstoptm era supplying very low vcesat

zero. Seventy nine. Ixgk120n60c2 ixgx120n60c2. Pdf length:925k _ixys

enhance technical informationvces = six hundred vhiperfasttm igbt ixgk 120n60c2ic110 = one hundred twenty alightspeed 2tm seriesixgx 120n60c2vce(sat) = 2. Five vtfi(typ) = 45 nssymbol test situations most ratingsto-264(ixgk)vces tj = 25c to 150c six hundred vvcgr tj = 25c to 150c; rge = 1 m 600 vvges continuous 20 vgvgem transient 30 vc (tab)eic25 tc = 25c (restricted with the aid of leads)

0. 80. Ixgr120n60b. Pdf size:558k _ixys

hiperfasttm igbtixgr 120n60b vces = six hundred vic25 = 156 aisoplus247tm(electrically isolated returned floor) vce(sat) = 2. 1 vsymbol take a look at conditions most ratingsisoplus 247e153432vces tj = 25c to 150c six hundred vvcgr tj = 25c to 150c; rge = 1 m 600 vvges continuous 20 vvgem transient 30 vgce remoted backside*ic25 tc = 25c 156 aic110 tc = 110c 102 ail(r

zero. 81. Ixsh20n60au1. Pdf size:82k _ixys

not for new designs vces ic25 vce(sat)low vce(sat) igbt with diode ixsh 20 n60u1 600 v 40 a 2. 5 vhigh velocity igbt with diode ixsh 20 n60au1 600 v 40 a three. Zero vcombi packsshort circuit soa capabilitysymbol take a look at situations maximum scores to-247 advces tj = 25c to 150c 600 vvcgr tj = 25c to 150c; rge = 1 m six hundred vvges continuous 20 vgcvgem brief 30 veic25 tc

0. 82. Ixgk120n60b. Pdf length:154k _ixys

hiperfasttm igbts vces = 600vixgk120n60bic90 = 120aixgx120n60bvce(sat) 2. 1vto-264 (ixgk)gsymbol take a look at conditions maximum ratingscevces tj = 25c to 150c six hundred vtabvcgr tj = 25c to 150c, rge = 1m 600 vvges continuous 20 vplus247 (ixgx)vgem temporary 30 vic25 tc = 25c ( chip capability ) two hundred aic90 tc = 90c one hundred twenty ailrms termin

0. 83. Ixgk320n60b3. Pdf size:193k _ixys

initial technical informationgenx3tm 600v vces = 600vixgk320n60b3ic90 = 320aigbtsixgx320n60b3vce(sat) 1. 6vmedium-velocity low-vsat ptigbts for five-forty khz switchingto-264 (ixgk)gsymbol test situations most ratingscevces tj = 25c to 150c 600 vtabvcgr tj = 25c to 150c, rge = 1m six hundred vvges continuous 20 vplus247 (ixgx)vgem t

zero. Eighty four. Ixgk120n60c2. Pdf size:186k _ixys

initial technical informationvces = 600vhiperfasttm igbt ixgk120n60c2lightspeed 2tm series ic110 = 120aixgx120n60c2 vce(sat) 2. 5v tfi(typ) = 80nsto-264(ixgk)image take a look at situations maximum ratingsvces tj = 25c to 150c six hundred vvcgr tj = 25c to 150c, rge = 1m 600 vgvges non-stop 20 vc (tab)evgem temporary 30 vic25 tc = 25

0. Eighty five. Ixsh20n60u1. Pdf length:82k _ixys

now not for brand new designs vces ic25 vce(sat)low vce(sat) igbt with diode ixsh 20 n60u1 600 v 40 a 2. 5 vhigh pace igbt with diode ixsh 20 n60au1 600 v 40 a three. Zero vcombi packsshort circuit soa capabilitysymbol check conditions maximum scores to-247 advces tj = 25c to 150c six hundred vvcgr tj = 25c to 150c; rge = 1 m six hundred vvges continuous 20 vgcvgem temporary 30 veic25 tc

zero. 86. Ixdp20n60bd1. Pdf size:277k _ixys

ixdp 20n60 b vces = 600 vhigh voltage igbtixdp 20n60 bd1 ic25 = 32 awith optionally available diodevce(sat) typ = 2. 2 vhigh velocity,low saturation voltagec cto-220 abg gg cec (tab)e eg = gate, e = emitter ixdp 20n60b ixdp 20n60b d1c = collector , tab = collectorsymbol conditions most ratings featuresnpt igbt technologyvces tj = 25c to 150c 600 vlow switching l

0. 87. Ixgh20n60-a ixgm20n60-a. Pdf size:64k _ixys

vces ic25 vce(sat)low vce(sat) igbt ixgh/ixgm 20 n60 six hundred v forty a 2. 5 vhigh speed igbt ixgh/ixgm 20 n60a 600 v 40 a 3. 0 vsymbol take a look at situations most ratings to-247 ad (ixgh)vces tj = 25c to 150c six hundred vvcgr tj = 25c to 150c; rge = 1 m 600 vvges non-stop 20 vgcvgem transient 30 veic25 tc = 25c40 aic90 tc = 90c20 a to-204 ae (ixgm)icm tc = 25c, 1 ms

zero. 88. Ixkp20n60c5m. Pdf length:101k _ixys

ixkp 20n60c5mid25 = 7. 6 acoolmos 1) energy mosfetvdss = six hundred vrds(on) max = 0. 2 completely remoted packagen-channel enhancement modelow rdson, high vdss mosfetdto-220 fpultra low gate chargegdgspreliminary datasfeaturesmosfet fast coolmos 1) electricity mosfetsymbol situations maximum ratings4th generationvdss tvj = 25c six hundred v – excessive blocking capabi

zero. 89. Ixgh20n60b. Pdf length:79k _ixys

vces = 600 vixgh 20n60bhiperfasttm igbtic25 = forty aixgt 20n60bvce(sat)typ = 1. 7 vtfi(typ) = a hundred nspreliminary records sheetsymbol take a look at situations maximum scores to-268 (d3) (ixgt)vces tj = 25c to 150c 600 vvcgr tj = 25c to 150c; rge = 1 mw 600 vg(tab)evges non-stop 20 vvgem brief 30 vic25 tc = 25c40 ato-247 ad (ixgh)ic90 tc = 90c20 aicm t

0. Ninety. Ixgk120n60b3-ixgx120n60b3. Pdf size:197k _ixys

vces = 600vgenx3tm 600v ixgk120n60b3ic110 = 120aixgx120n60b3igbtsvce(sat) 1. 8vtfi(typ) = 145nsmedium-speed-low-vsat ptigbts for five-40khz switchingto-264 (ixgk)image check situations maximum ratingsgvces tj = 25c to 150c six hundred vcevcgr tj = 25c to 150c, rge = 1m six hundred vtabvges non-stop 20 vvgem transient 30 vplus247tm (ixg

0. Ninety one. Ixdp20n60b. Pdf size:277k _ixys

ixdp 20n60 b vces = 600 vhigh voltage igbtixdp 20n60 bd1 ic25 = 32 awith non-compulsory diodevce(sat) typ = 2. 2 vhigh speed,low saturation voltagec cto-220 abg gg cec (tab)e eg = gate, e = emitter ixdp 20n60b ixdp 20n60b d1c = collector , tab = collectorsymbol conditions maximum scores featuresnpt igbt technologyvces tj = 25c to 150c 600 vlow switching l

zero. Ninety two. Ixgn120n60a3. Pdf size:200k _ixys

vces = 600vixgn120n60a3genx3tm 600v igbtixgn120n60a3d1 ic110 = 120avce(sat) 1. 35vultra-low vsat pt igbts for up to5khz switchingsot-227b, minibloc e153432e e 60a360a3d1 gsymbol take a look at conditions most ratingsvces tj = 25c to 150c 600 ve vcgr tj = 25c to 150c, rge = 1m 600 vcvges non-stop 20 vg = gate, c = collector, e =

zero. 93. Ixsp20n60b2d1. Pdf length:173k _ixys

ixsa 20n60b2d1vces = 600 vhigh speed igbtixsp 20n60b2d1ic25 = 35 avce(sat) = 2. Five vshort circuit soa capabilitypreliminary data sheetsymbol check conditions maximum scores to-220 (ixsp)vces tj = 25c to 150c 600 vvcgr tj = 25c to 150c; rge = 1 m 600 vc (tab)vges continuous 20 vgcvgem brief 30 veic25 tc = 25c35 aic110 tc = 110c20 ato-22

zero. Ninety four. Ixga20n60b. Pdf size:77k _ixys

ixga 20n60b vces = 600 vhiperfasttm igbtixgp 20n60b ic25 = forty avce(sat)typ = 1. 7 vtfi = a hundred nspreliminary statistics sheetsymbol check situations most ratingsto-220ab (ixgp)vces tj = 25c to 150c 600 vvcgr tj = 25c to 150c; rge = 1 mw six hundred vvges continuous 20 vgvgem brief 30 vceic25 tc = 25c 40 aic90 tc = 90c 20 ato-263 aa (ixga)icm tc = 25c,

0. Ninety five. Ixgx120n60b3. Pdf size:194k _ixys

vces = 600vgenx3tm 600v ixgk120n60b3ic110 = 120aixgx120n60b3igbtsvce(sat) 1. 8vtfi(typ) = 145nsmedium-pace-low-vsat ptigbts for 5-40khz switchingto-264 (ixgk)image take a look at situations maximum ratingsgvces tj = 25c to 150c six hundred vcevcgr tj = 25c to 150c, rge = 1m six hundred vtabvges continuous 20 vvgem transient 30 vplus247tm (ixg

0. 96. Ixkc20n60c. Pdf size:172k _ixys

ixkc 20n60cvdss = six hundred vcoolmos 1) energy mosfetid25 = 15 ards(on) max = 190 melectrically isolated back surface2500 v electrical isolationn-channel enhancement modedisoplus220tmlow rdson, high vdss mosfetultra low gate chargeggd sisolated tabse72873featuresmosfet silicon chip on direct-copper-bond symbol situations most ratingssubstrate

0. Ninety seven. Ixth15n60 ixtm15n60 ixth20n60 ixtm20n60. Pdf length:316k _ixys

downloaded from ohlno. Com – datasheet seek engine downloaded from ohlno. Com – datasheet search engine downloaded from ohlno. Com – datasheet seek engine downloaded from ohlno. Com – datasheet search engine

0. 98. Ixgt20n60bd1. Pdf length:52k _ixys

ixgh 20n60bd1hiperfasttm igbt vces = six hundred vixgt 20n60bd1with diode ic25 = 40 avce(sat)typ = 1. 7 vtfi(typ) = a hundred nspreliminary datasymbol check conditions maximum scores to-268(ixgt)vces tj = 25c to 150c 600 vgvcgr tj = 25c to 150c; rge = 1 mw six hundred vec (tab)vges continuous 20 vvgem temporary 30 vto-247 adic25 tc = 25c40 a(ixgh)ic90 tc = 90c20 a

0. Ninety nine. Ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60. Pdf size:82k _ixys

vdss id25 rds(on)hiperfettmixfh/ixfm 15 n60 six hundred v 15 a zero. 50 wpower mosfetsixfh/ixfm 20 n60 six hundred v 20 a zero. 35 wtrr 250 nsn-channel enhancement modehigh dv/dt, low trr, hdmostm familysymbol take a look at situations maximum scores to-247 advert (ixfh)vdss tj = 25c to 150c six hundred vvdgr tj = 25c to 150c; rgs = 1 mw 600 v(tab)vgs continuous 20 vvgsm transient 30 vid25 tc = 2

0. One hundred. Ixgk120n60a3. Pdf length:211k _ixys

genx3tm a3-class ixgk120n60a3 vces = 600vixgx120n60a3ic110 = 120aigbtsvce(sat) 1. 35vultra-low vsat pt igbts forup to 5khz switchingto-264 (ixgk)image take a look at conditions maximum ratingsvces tj = 25c to 150c 600 vvcgr tj = 25c to 150c, rge = 1m six hundred vg(tab)cvges continuous 20 veevgem temporary 30 vic25 tc = 25c two hundred aplus 2

zero. One zero one. Ixgx320n60a3. Pdf length:199k _ixys

genx3tm 600v igbts vces = 600vixgk320n60a3ic25 = 320aixgx320n60a3vce(sat) 1. 25vultra-low vsat pt igbts forup to 5khz switchingto-264 (ixgk)image check conditions maximum ratingsvces tj = 25c to 150c six hundred vgvcgr tj = 25c to 150c, rge = 1m 600 vctabeevges continuous 20 vvgem brief 30 vplus247tm (ixgx)ic25 tc = 25c (c

0. 102. Ixsa20n60b2d1. Pdf size:173k _ixys

ixsa 20n60b2d1vces = 600 vhigh pace igbtixsp 20n60b2d1ic25 = 35 avce(sat) = 2. 5 vshort circuit soa capabilitypreliminary information sheetsymbol take a look at conditions most scores to-220 (ixsp)vces tj = 25c to 150c six hundred vvcgr tj = 25c to 150c; rge = 1 m 600 vc (tab)vges non-stop 20 vgcvgem transient 30 veic25 tc = 25c35 aic110 tc = 110c20 ato-22

zero. 103. Ixfh20n60q ixft20n60q. Pdf size:144k _ixys

ixfh 20n60q vdss = 600 vhiperfettmixft 20n60q id25 = 20 apower mosfets rds(on) = zero. 35 q-classtrr 250nsn-channel enhancement modeavalanche rated, excessive dv/dt,low gate price and capacitancessymbol check situations maximum ratings to-247 ad (ixfh)vdss tj = 25c to 150c six hundred vvdgr tj = 25c to 150c; rgs = 1 m 600 vvgs c

0. 104. Ixgx320n60b3. Pdf size:193k _ixys

initial technical informationgenx3tm 600v vces = 600vixgk320n60b3ic90 = 320aigbtsixgx320n60b3vce(sat) 1. 6vmedium-pace low-vsat ptigbts for five-forty khz switchingto-264 (ixgk)gsymbol test conditions maximum ratingscevces tj = 25c to 150c six hundred vtabvcgr tj = 25c to 150c, rge = 1m 600 vvges non-stop 20 vplus247 (ixgx)vgem t

zero. 105. Ixsq20n60b2d1. Pdf length:590k _ixys

ixsh 20n60b2d1vces = 600 vhigh velocity igbtic25 = 35 avce(sat) = 2. 5 vshort circuit soa capabilitypreliminary information sheetd1symbol test situations maximum scores to-247 (ixsh)vces tj = 25c to 150c 600 vvcgr tj = 25c to 150c; rge = 1 m 600 vvges continuous 20 vgvgem transient 30 vceic25 tc = 25c35 ag = gate c = collectoric110 tc = 110c20 ae

0. 106. Ixgr120n60c2. Pdf length:169k _ixys

initial technical informationvces = 600vhiperfasttm igbt ixgr120n60c2ic110 = 60aisoplus247tmvce(sat) 2. 7vlightspeed 2tm seriestfi(typ) = 80ns(electrically remoted back floor)isoplus247symbol check situations most ratingsvces tj = 25c to 150c 600 vvcgr tj = 25c to 150c, rge = 1m 600 vvges continuous 20 vg (remoted tab)

zero. 107. Ixgh20n60bd1. Pdf size:52k _ixys

ixgh 20n60bd1hiperfasttm igbt vces = 600 vixgt 20n60bd1with diode ic25 = 40 avce(sat)typ = 1. 7 vtfi(typ) = a hundred nspreliminary datasymbol take a look at conditions maximum rankings to-268(ixgt)vces tj = 25c to 150c 600 vgvcgr tj = 25c to 150c; rge = 1 mw 600 vec (tab)vges continuous 20 vvgem brief 30 vto-247 adic25 tc = 25c40 a(ixgh)ic90 tc = 90c20 a

zero. 108. Ixgx120n60c2. Pdf length:186k _ixys

initial technical informationvces = 600vhiperfasttm igbt ixgk120n60c2lightspeed 2tm series ic110 = 120aixgx120n60c2 vce(sat) 2. 5v tfi(typ) = 80nsto-264(ixgk)symbol test conditions maximum ratingsvces tj = 25c to 150c six hundred vvcgr tj = 25c to 150c, rge = 1m six hundred vgvges continuous 20 vc (tab)evgem temporary 30 vic25 tc = 25

0. 109. Ixgk320n60a3. Pdf length:199k _ixys

genx3tm 600v igbts vces = 600vixgk320n60a3ic25 = 320aixgx320n60a3vce(sat) 1. 25vultra-low vsat pt igbts forup to 5khz switchingto-264 (ixgk)image take a look at conditions most ratingsvces tj = 25c to 150c 600 vgvcgr tj = 25c to 150c, rge = 1m 600 vctabeevges non-stop 20 vvgem temporary 30 vplus247tm (ixgx)ic25 tc = 25c (c

zero. A hundred and ten. Ixsh20n60b2d1. Pdf size:590k _ixys

ixsh 20n60b2d1vces = 600 vhigh pace igbtic25 = 35 avce(sat) = 2. 5 vshort circuit soa capabilitypreliminary facts sheetd1symbol test situations most rankings to-247 (ixsh)vces tj = 25c to 150c 600 vvcgr tj = 25c to 150c; rge = 1 m six hundred vvges continuous 20 vgvgem transient 30 vceic25 tc = 25c35 ag = gate c = collectoric110 tc = 110c20 ae

0. 111. Ixgn320n60a3. Pdf size:166k _ixys

vces = 600vixgn320n60a3genx3tm 600v igbtic25 = 320avce(sat) 1. 25vultra-low-vsat pt igbt forup to 5khz switchingesot-227b, miniblocsymbol check situations maximum ratings e153432vces tj = 25c to 150c six hundred ve vcgr tj = 25c to 150c, rge = 1m 600 vgvges non-stop 20 vvgem transient 30 ve ic25 tc = 25c (chip capability) 320 a

0. 112. Ixgp20n60b. Pdf length:77k _ixys

ixga 20n60b vces = six hundred vhiperfasttm igbtixgp 20n60b ic25 = forty avce(sat)typ = 1. 7 vtfi = 100 nspreliminary facts sheetsymbol take a look at conditions maximum ratingsto-220ab (ixgp)vces tj = 25c to 150c six hundred vvcgr tj = 25c to 150c; rge = 1 mw six hundred vvges non-stop 20 vgvgem brief 30 vceic25 tc = 25c forty aic90 tc = 90c 20 ato-263 aa (ixga)icm tc = 25c,

zero. 113. Ixgn120n60a3-a3d1. Pdf length:202k _ixys

vces = 600vixgn120n60a3genx3tm 600v igbtixgn120n60a3d1 ic110 = 120avce(sat) 1. 35vultra-low vsat pt igbts for up to5khz switchingsot-227b, minibloc e153432e e 60a360a3d1 gsymbol check conditions maximum ratingsvces tj = 25c to 150c six hundred ve vcgr tj = 25c to 150c, rge = 1m six hundred vcvges continuous 20 vg = gate, c = collector, e =

zero. 114. Mmix1g320n60b3. Pdf size:243k _ixys

develop technical informationgenx3tm 600v vces = 600vmmix1g320n60b3ic25 = 400aigbtvce(sat) 1. 50vmedium-speed low-vsat ptigbts for five-forty khz switchingcgesymbol check conditions maximum ratingsvces tj = 25c to 150c 600 v isolated tabvcgr tj = 25c to 150c, rge = 1m six hundred vcvges continuous 20 vvgem transient 30 vic25 tc = 25c four

zero. A hundred and fifteen. Ixgx120n60b. Pdf length:154k _ixys

hiperfasttm igbts vces = 600vixgk120n60bic90 = 120aixgx120n60bvce(sat) 2. 1vto-264 (ixgk)gsymbol check conditions most ratingscevces tj = 25c to 150c six hundred vtabvcgr tj = 25c to 150c, rge = 1m 600 vvges continuous 20 vplus247 (ixgx)vgem temporary 30 vic25 tc = 25c ( chip functionality ) 2 hundred aic90 tc = 90c 120 ailrms termin

zero. 116. Ixgx120n60a3. Pdf length:211k _ixys

genx3tm a3-magnificence ixgk120n60a3 vces = 600vixgx120n60a3ic110 = 120aigbtsvce(sat) 1. 35vultra-low vsat pt igbts forup to 5khz switchingto-264 (ixgk)symbol test conditions most ratingsvces tj = 25c to 150c six hundred vvcgr tj = 25c to 150c, rge = 1m six hundred vg(tab)cvges non-stop 20 veevgem brief 30 vic25 tc = 25c 2 hundred aplus 2

0. 117. Ixth20n60 ixtm20n60. Pdf length:105k _ixys

ixth 20n60 vdss = six hundred vmegamostmfetixtm 20n60 id25 = 20 ards(on) = 0. 35 n-channel enhancement modesymbol take a look at situations maximum ratings to-247 ad (ixth)vdss tj = 25c to 150c 600 vvdgr tj = 25c to 150c; rgs = 1 m six hundred vvgs non-stop 20 v d (tab)vgsm transient 30 vid25 tc = 25c 15n60 15 ato-204 ae (ixtm)20n60 20 aidm tc = 25c, p

zero. 118. Ixgt20n60b. Pdf size:79k _ixys

vces = six hundred vixgh 20n60bhiperfasttm igbtic25 = 40 aixgt 20n60bvce(sat)typ = 1. 7 vtfi(typ) = 100 nspreliminary facts sheetsymbol test conditions most ratings to-268 (d3) (ixgt)vces tj = 25c to 150c 600 vvcgr tj = 25c to 150c; rge = 1 mw 600 vg(tab)evges non-stop 20 vvgem temporary 30 vic25 tc = 25c40 ato-247 advert (ixgh)ic90 tc = 90c20 aicm t

0. 119. Ixgk120n60b ixgx120n60b. Pdf size:601k _ixys

hiperfasttm igbtixgk 120n60b vces = 600 vixgx 120n60b ic25 = two hundred avce(sat) = 2. 1 vsymbol take a look at situations most rankings plus 247tm(ixgx)vces tj = 25c to 150c 600 vvcgr tj = 25c to 150c; rgs = 1 m six hundred vvces non-stop 20 v (tab)gvgem brief 30 vceic25 tc = 25c 2 hundred a to-264 aaic90 tc = 90c 120 a (ixgk)il(rms) external lead restriction seventy six aicm tc

0. 120. Ixgk120n60b3. Pdf length:194k _ixys

vces = 600vgenx3tm 600v ixgk120n60b3ic110 = 120aixgx120n60b3igbtsvce(sat) 1. 8vtfi(typ) = 145nsmedium-speed-low-vsat ptigbts for 5-40khz switchingto-264 (ixgk)image take a look at situations most ratingsgvces tj = 25c to 150c 600 vcevcgr tj = 25c to 150c, rge = 1m 600 vtabvges non-stop 20 vvgem brief 30 vplus247tm (ixg

zero. 121. Ixgn120n60a3d1. Pdf size:200k _ixys

vces = 600vixgn120n60a3genx3tm 600v igbtixgn120n60a3d1 ic110 = 120avce(sat) 1. 35vultra-low vsat pt igbts for up to5khz switchingsot-227b, minibloc e153432e e 60a360a3d1 gsymbol test conditions most ratingsvces tj = 25c to 150c 600 ve vcgr tj = 25c to 150c, rge = 1m six hundred vcvges continuous 20 vg = gate, c = collector, e =

zero. 122. Fcb20n60. Pdf size:498k _onsemi

is now part ofto learn greater approximately on semiconductor, please go to our internet site at www. Onsemi. Complease word: as a part of the fairchild semiconductor integration, a number of the fairchild orderable part numbers will want to change as a way to meet on semiconductors gadget requirements. For the reason that on semiconductor product management structures do no longer have the capability to control part nomenclatur

0. 123. Fcp20n60 fcpf20n60. Pdf length:642k _onsemi

is now component ofto analyze greater approximately on semiconductor, please go to our website at www. Onsemi. Complease note: as a part of the fairchild semiconductor integration, some of the fairchild orderable component numbers will want to trade to be able to meet on semiconductors gadget necessities. Since the on semiconductor product control systems do not have the capability to manage component nomenclatur

0. 124. Fca20n60. Pdf length:942k _onsemi

fca20n60n-channel superfet mosfet600 v, 20 a, 190 mdescriptionsuperfet mosfet is on semiconductors first genera-tion featuresof excessive voltage top notch-junction (sj) mosfet own family this is 650v @ tj = 150c utilising charge stability technology for first rate low on-resistance and lower gate price performance. This generation typ. Rds(on) = a hundred and fifty mis tailor-made to

zero. A hundred twenty five. Fcb20n60f. Pdf length:486k _onsemi

is now component ofto study more about on semiconductor, please go to our website at www. Onsemi. Complease be aware: as a part of the fairchild semiconductor integration, a number of the fairchild orderable element numbers will need to alternate on the way to meet on semiconductors system necessities. Because the on semiconductor product control systems do now not have the potential to manipulate element nomenclatur

zero. 126. 20n60. Pdf size:203k _utc

unisonic technologies co., ltd 20n60 power mosfet 20a, 600v n-channel power mosfet description the utc 20n60 is an n-channel enhancement mode energy mosfet using utcs advanced generation to offer customerswith planar stripe and dmos generation. This era isspecialized in allowing a minimal on-country resistance and superior switching overall performance. It can also withst

0. 127. Apt20n60bc3. Pdf size:194k _apt

apt20n60bc3apt20n60sc3600v 20. 7a zero. 190super junction mosfetd3pakto-247coolmospower semiconductors extremely low rds(on) low miller capacitanced extremely low gate fee, qg avalanche energy ratedg to-247 or surface mount d3pak packagesmaximum rankings all scores: tc = 25c unless in any other case specified. Image parameter apt17n80bc3_s

0. 128. Fmw20n60s1hf. Pdf size:470k _fuji

http://www. ohlno. Com/merchandise/semiconductor/fmw20n60s1hf fuji electricity mosfetsuper j-mos series n-channel enhancement mode strength mosfetfeatures define drawings [mm] equal circuit schematiclow on-country resistanceto-247-p2low switching losseasy to use (extra controllabe switching dv/dt via r )gdrain(d)applicationsupsservergate(g)telecom source(s)

zero. 129. Fmh20n60s1. Pdf size:701k _fuji

http://www. ohlno. Com/merchandise/semiconductor/fmh20n60s1 fuji energy mosfetsuper j-mos series n-channel enhancement mode energy mosfetfeatures outline drawings [mm] equivalent circuit schematicpb-unfastened lead terminalto-3p(q) three. 2 zero. 115. 5max1. 50. 213 zero. 24. 50. 2rohs compliant 10 0. 2drainapplicationsfor switching+zero. 3 +zero. 31. 6 -zero. Eleven. 6 -0. 1+0. 32. 2 -zero

0. 130. Fmp20n60s1. Pdf length:410k _fuji

http://www. ohlno. Com/merchandise/semiconductor/fmp20n60s1 fuji electricity mosfetsuper j-mos series n-channel enhancement mode electricity mosfetfeatures define drawings [mm] equal circuit schematiclow on-country resistance 4. 50. 2to-220 10+zero. 5 01. 30. 2low switching losseasy to apply (greater controllabe switching dv/dt via r )gdrain(d)applicationsups1. 2 0. 2serverpre-s

zero. 131. Fmv20n60s1. Pdf size:448k _fuji

http://www. ohlno. Com/products/semiconductor/fmv20n60s1 fuji strength mosfetsuper j-mos collection n-channel enhancement mode energy mosfetfeatures outline drawings [mm] equivalent circuit schematiclow on-country resistanceto-220f(sls)low switching losseasy to use (extra controllabe switching dv/dt with the aid of r )gdrain(d)applicationsupsservergate(g)telecomsource(s)energy condi

zero. 132. Hgtg20n60c3r. Pdf length:112k _harris_semi

hgtg20n60c3r, hgtp20n60c3r,s e m i c o n d u c t o rhgt1s20n60c3r, hgt1s20n60c3rs40a, 600v, rugged united statescollection n-channel igbtsjanuary 1997features description 40a, 600v tj = 25oc this own family of igbts changed into designed for maximum performancein the traumatic world of motor manage operation in addition to 600v switching soa capabilityother excessive voltage switching packages. Those

0. 133. Hgtp20n60c3r. Pdf size:112k _harris_semi

hgtg20n60c3r, hgtp20n60c3r,s e m i c o n d u c t o rhgt1s20n60c3r, hgt1s20n60c3rs40a, 600v, rugged americacollection n-channel igbtsjanuary 1997features description 40a, 600v tj = 25oc this own family of igbts became designed for max performancein the stressful world of motor manipulate operation as well as 600v switching soa capabilityother high voltage switching programs. Those

0. 134. Kgf20n60kda. Pdf length:1523k _kec

semiconductorkgf20n60kdatechnical datageneral descriptionkec area prevent trench igbts provide low switching losses, excessive power efficiencyand short circuit ruggedness.20n60 equivalent. It’s far designed for applications including motor manage, uninterrupted powersupplies(ups), widespread inverters. Functions high speed switchinghigh ruggedness, temperature stable behaviorshort circuit face up to t

zero. 135. Kgt20n60kda. Pdf size:441k _kec

semiconductorkgt20n60kdatechnical datageneral descriptionkec npt trench igbts offer low switching losses, high power performance baos kand short circuit ruggedness. It is designed for programs consisting of motor control, uninterrupted powersupplies(ups), preferred inverters. Dim millimeters_+a 15. Ninety 0. 30_b5. 00 + 0. 20features _c20. Eighty five + zero. 30_d3. 00 + zero. 20

0. 136. Kgf20n60pa. Pdf size:1411k _kec

semiconductorkgf20n60patechnical datageneral descriptionkec subject stop trench igbts provide low switching losses, excessive power efficiencyand brief circuit ruggedness. It’s far designed for applications which includes motor control, uninterrupted powersupplies(ups), fashionable inverters. Functions excessive speed switchinghigh ruggedness, temperature strong behaviorshort circuit face up to ti

0. 137. 20n60a msafx20n60a. Pdf size:34k _microsemi

2830 s. Fairview st. Santa ana, ca 92704ph: (714) 979-8220fax: (714) 966-5256msafx20n60afeatures600 volts ultrafast frame diode 20 amps rugged polysilicon gate cellular structure350 m increased unclamped inductive switching (uis) capability hermetically sealed, floor mount electricity bundle low package deal inductancen-channel very low thermal resistance

zero. 138. Aot20n60. Pdf size:540k _aosemi

aot20n60/aotf20n60600v,20a n-channel mosfetgeneral description product precis vds700v@150the aot20n60 & aotf20n60 had been fabricatedusing an advanced excessive voltage mosfet process this is identification (at vgs=10v) 20adesigned to deliver high ranges of performance and rds(on) (at vgs=10v)

zero. 139. Aok20n60. Pdf length:445k _aosemi

aok20n60600v,20a n-channel mosfetgeneral description product precis vds700v@150the aok20n60 is fabricated using a complicated highvoltage mosfet system that is designed to deliver high id (at vgs=10v) 20alevels of overall performance and robustness in famous ac-dc rds(on) (at vgs=10v)

zero. One hundred forty. Aotf20n60. Pdf length:540k _aosemi

aot20n60/aotf20n60600v,20a n-channel mosfetgeneral description product summary vds700v@150the aot20n60 & aotf20n60 had been fabricatedusing an advanced excessive voltage mosfet method this is identification (at vgs=10v) 20adesigned to deliver excessive degrees of overall performance and rds(on) (at vgs=10v)

0. 141. Aok20n60l. Pdf length:445k _aosemi

aok20n60600v,20a n-channel mosfetgeneral description product summary vds700v@150the aok20n60 is fabricated using a complicated highvoltage mosfet system this is designed to supply excessive identity (at vgs=10v) 20alevels of overall performance and robustness in popular ac-dc rds(on) (at vgs=10v)

zero. 142. Aot20n60l. Pdf size:540k _aosemi

aot20n60/aotf20n60600v,20a n-channel mosfetgeneral description product precis vds700v@150the aot20n60 & aotf20n60 had been fabricatedusing a sophisticated excessive voltage mosfet procedure that is identity (at vgs=10v) 20adesigned to deliver high ranges of performance and rds(on) (at vgs=10v)

zero. 143. Sff20n60n sff20n60p. Pdf length:164k _ssdi

20n60 equivalent

0. One hundred forty four. Sff20n60b. Pdf length:155k _ssdi

20n60 equivalent

0. 145. Jcs20n60fh. Pdf length:1073k _jilin_sino

n n- channel mosfetrjcs20n60fh fundamental characteristics package deal id 20 a vdss 600 v rdson -max @vgs=10v 0. 39 qg-typ 50nc applications high performance switchmode power supplies electronic lamp ballastsups primarily based on half bridge ups

zero. 146. Sdf20n60jea sdf20n60jeb sdf20n60jec sdf20n60jed. Pdf length:68k _solitron

20n60 equivalent

0. 147. Sdf20n60. Pdf length:154k _solitron

20n60 equivalent

zero. 148. Ssf20n60h. Pdf length:463k _silikron

ssf20n60h fundamental product traits: vdss 600v rds(on) zero. 2ohm(typ.) identification 20a marking a nd p in to247 sche ma ti c di agr a m challenge features and blessings: excessive dv/dt and avalanche abilities a hundred% avalanche tested low enter capacitance and gate charge low gate input resistance description: the ssf20n60h collection mosfets is a new technologyw

zero. 149. Brf20n60. Pdf size:1187k _blue-rocket-choose

brf20n60(brcs20n60fl) rev. C feb.-2015 facts sheet / descriptions to-220fl n mos n-channel mosfet in a to-220fl plastic package deal. / functions ,ultra low gate rate, low effective output capacitance, high transfer pace.20n60 equivalent. / packages

0. A hundred and fifty. Cs20n60 anh. Pdf size:437k _crhj

silicon n-channel strength mosfet r cs20n60 anh vdss 600 v general description identity 20 a cs20n60 anh, the silicon n-channel greater pd(tc=25) 250 w vdmosfets, is obtained by way of the self-aligned planar generation rds(on)typ zero. 36 which reduce the conduction loss, enhance switching overall performance and beautify the avalanche power. The transistor may be utilized in various po

0. 151. Cs20n60f a9h. Pdf length:431k _crhj

silicon n-channel power mosfet r cs20n60f a9h vdss six hundred v trendy description identity 20 a cs20n60f a9h, the silicon n-channel improved pd(tc=25) eighty five w vdmosfets, is obtained by way of the self-aligned planar generation rds(on)typ 0. 36 which lessen the conduction loss, enhance switching overall performance and beautify the avalanche strength.20n60 equivalent. The transistor may be used in diverse

0. 152. Cs20n60 a8h. Pdf size:434k _crhj

silicon n-channel power mosfet r cs20n60 a8h vdss 600 v widespread description identity 20 a cs20n60 a8h, the silicon n-channel superior pd(tc=25) 250 w vdmosfets, is obtained by way of the self-aligned planar technology rds(on)typ 0. 36 which reduce the conduction loss, improve switching performance and decorate the avalanche electricity. The transistor can be used in numerous po

zero. 153. Cs20n60. Pdf size:109k _china

cs20n60 n pd tc=25 three hundred w 2. 38 w/ id vgs=10v,tc=25 20 a vgs 20 v tjm +150 tstg -fifty five +a hundred and fifty rthjc zero. Forty two /w bvdss vgs=0v,identification=zero. 25ma six hundred v rds on vgs=10v,identification=10a 0. 32 0. 46 vgs th vds=vgs,identification=0. 25m

0. 154. Cm20n60p to3pb. Pdf length:140k _jdsemi

rcm20n60p www. Jdsemi. Cnshenzhen jingdao digital co.,ltd. Electricity mosfet 600v n-channel vdmos rohs

zero. A hundred and fifty five. Cm20n60. Pdf length:126k _jdsemi

rcm20n60 www. Jdsemi. Cnshenzhen jingdao digital co.,ltd. Power mosfet 600v n-channel vdmos rohs 1 2 three

zero. 156. Cm20n60f. Pdf length:130k _jdsemi

rcm20n60f www. Jdsemi. Cnshenzhen jingdao electronic co.,ltd. Electricity mosfet 600v n-channel vdmos rohs 1 2 12 3

0. 157. Svs20n60fjd2 svs20n60kd2 svs20n60td2 svs20n60pnd2 svs20n60sd2 svs20n60sd2tr svs20n60p7d2. Pdf size:460k _silan

svs20n60fj(k)(t)(pn)(s)(p7)d2 20a, 600v dp mos svs20n60fj(k)(t)(pn)(s)(p7)d2 n mosfet dp mos svs20n60fj(okay)(t)(pn)(s)(p7)d2 /

zero. 158. Svf20n60f svf20n60pn. Pdf length:419k _silan

svf20n60f/pn 20a600v n svf20n60f/pn n mos f-celltm vdmos

0. 159. Msw20n60. Pdf length:453k _bruckewell

preliminary msw20n60 500v n-channel mosfet description this latest era has been mainly designed to reduce on-nation resistance, have a high rugged avalanche characteristics. These devices are well suitable for excessive performance switch mode power substances. Capabilities rds(on) (common zero. 26 )@vgs=10v gate charge (typical 80nc) advanced dv/dt functionality, excessive.20n60 equivalent.

zero. One hundred sixty. Wfw20n60w. Pdf length:279k _winsemi

wfw20n60wwfw20n60wwfw20n60wwfw20n60wsilicon n-channel mosfetsilicon n-channel mosfetsilicon n-channel mosfetsilicon n-channel mosfetfeatures 20a,600v,r (max0. 39)@v =10vds(on) gs ultra-low gate price(regular 150nc) fast switching functionality 100%avalanche examined maximum junction temperature range(one hundred fifty)standard descriptionthis power mosfet is pro

zero. 161. Wff20n60s. Pdf size:535k _winsemi

wff20n60swff20n60swff20n60swff20n60ssilicon n-channel mosfetsilicon n-channel mosfetsilicon n-channel mosfetsilicon n-channel mosfetfeatures extremely low rdson extremely-low gate price(ordinary 68nc) one hundred% usatested rohs compliantgeneral descriptionwinsemi strength mosfet is fabricated the use of superior superjunction technology. The ensuing tool has extraordinarily low

zero. 162. Wff20n60. Pdf size:271k _winsemi

wff20n60wff20n60wff20n60wff20n60silicon n-channel mosfetsilicon n-channel mosfetsilicon n-channel mosfetsilicon n-channel mosfetfeatures 20a,600v,r (max0. 39)@v =10vds(on) gs ultra-low gate charge(ordinary 50nc) rapid switching capability 100%avalanche examined most junction temperature range(150)general descriptionthis energy mosfet is produced

zero. 163. Cs20n60fa9h. Pdf length:2676k _citcorp

cs20n60fa9h600v silicon n-channel electricity mosfet capabilities define speedy switching. To-220f esd stepped forward capability. 0. 189(4. 80)0. 173(4. Forty) low gate rate. Zero. 409(10. 40)0. 378(9. 60) 0. 114(2. Ninety) low reverse switch capacitances. Zero. 098(2. 50) one hundred% unmarried pulse avalanche power test. 0. 638(sixteen. 20)zero. 606(15. Forty)marking code mechanical datag d s ep

zero. 164. Fhf20n60a fhp20n60a fha20n60a. Pdf length:858k _feihonltd

n n-channel mosfet fhf20n60a/ fhp20n60a/fha20n60a fundamental characteristics functions low gate charge identification 20a crss ( 20pf) low crss (usual 20pf ) vdss 600v fast switching rdson-typ 0. 32 @vgs=10v a hundred% a hundred% avalanche examined p (t =25) 85w d c.20n60 equivalent.

0. 165. Ptp20n60 pta20n60. Pdf size:624k _pipsemi

ptp20n60 pta20n60 600v n-channel mosfet widespread features bvdss rds(on),typ. Id proprietary new planar technology600v 0. 35 20a rds(on),typ.=zero. 35 @vgs=10v low gate charge decrease switching loss rapid recuperation body diode programs crt,television/screen different applicationsordering information component quantity package deal logo ptp20n60 to-220pta20n60 to-2

0. 166. Ptp20n60a pta20n60a. Pdf length:869k _pipsemi

ptp20n60a pta20n60a 600v n-channel mosfet widespread features bvdss rds(on),typ. Identification proprietary new planar technology 600v zero. 32 20a rds(on),typ.=0. 32 @vgs=10v low gate charge minimize switching loss rapid healing body diode packages crt,television/screen g d s other programs g d s ordering statistics to-220 to-220f part variety pa.20n60 equivalent,

0. 167. Ps20n600a. Pdf size:303k _prospower

ps20n600a 600v unmarried channel nmoseft revision : 1. 0update date : jan. 2012 prospower microelectronics co., ltdps20n600a 600v unmarried channel nmosfet2. Packages 1. Preferred description power aspect correction (percent) the ps20n600a uses advanced high voltage switched mode strength elements (smps) generation and layout to provide great rds(on) uninterruptible p.20n60 equivalent.

zero. 168. Sw20n60k swf20n60k. Pdf size:647k _samwin

sw20n60k n-channel stronger mode to-220f mosfet functions to-220f bvdss : 600v identity : 20a high ruggedness low rds(on) (typ 0. 15)@vgs=10v rds(on) : 0. 15 low gate price (typ 60nc) progressed dv/dt capability 2 1 a hundred% avalanche examined 2 three utility:led,charge,pc energy 1 1. Gate 2. Drain three. Supply three fashionable description this electricity.20n60 equivalent.

zero. 169. Hih20n60bp. Pdf length:644k _semihow

dec 2013vces = six hundred vic = 20 ahih20n60bp vce(sat) typ = 2. 2 v600v pt igbtto-3pfeatures low vce(sat)g most junction temperature one hundred fifty ce quick circuit resist time five designed for operation between 1-20khz very tight parameter distribution excessive ruggedness, temperature strong behaviorabsolute most ratingssymbol parameter value unitsvces collector-e

zero. A hundred and seventy. Hia20n60bp. Pdf length:664k _semihow

dec 2013vces = 600 vic = 20 ahia20n60bp vce(sat) typ = 2. 2 v600v pt igbtto-247features low vce(sat) most junction temperature one hundred fifty gce brief circuit resist time five designed for operation between 1-20khz very tight parameter distribution excessive ruggedness, temperature strong behaviorabsolute most ratingssymbol parameter cost unitsvces collector-

0. 171. Tman20n60. Pdf length:694k _trinnotech

tman20n60 n-channel mosfet features bvdss identification rds(on)max low gate price 600v 20a

zero. 172. Tman20n60a. Pdf length:505k _trinnotech

tman20n60a n-channel mosfet capabilities bvdss identification rds(on) low gate charge 600v 20a

zero. 173. Cs20n60a8h. Pdf length:434k _wuxi_china

silicon n-channel power mosfet r cs20n60 a8h vdss 600 v widespread description identification 20 a cs20n60 a8h, the silicon n-channel more suitable pd(tc=25) 250 w vdmosfets, is acquired by means of the self-aligned planar generation rds(on)typ zero. 36 which lessen the conduction loss, enhance switching performance and decorate the avalanche strength.20n60 equivalent. The transistor can be utilized in various po

zero. 174. Cs20n60anh. Pdf length:437k _wuxi_china

silicon n-channel energy mosfet r cs20n60 anh vdss six hundred v standard description id 20 a cs20n60 anh, the silicon n-channel stronger pd(tc=25) 250 w vdmosfets, is acquired by the self-aligned planar technology rds(on)typ zero. 36 which reduce the conduction loss, improve switching overall performance and enhance the avalanche power. The transistor can be utilized in diverse po

zero. 175. Csfr20n60f. Pdf length:618k _convert

nvertcsfr20n60fsuzhou convert semiconductor co ., ltd. 600v n-channel mosfetfeatures fast switching integrate speedy recovery diode speedy switching velocity 100% avalanche examined improved dv/dt capabilityapplicationsswitch mode strength supply (smps) motor controls electricity element correction (percent)device marking and bundle informationdevice bundle marki

0. 176. Cs20n60f cs20n60p. Pdf size:649k _convert

nvertcs20n60f,cs20n60psuzhou convert semiconductor co ., ltd. 600v n-channel mosfetfeatures rapid switching 100% avalanche examined stepped forward dv/dt capabilityapplications transfer mode electricity supply (smps) uninterruptible electricity supply (ups) power element correction (p. C)device marking and package deal informationdevice package deal markingcs20n60f to-220f cs20n60fcs

0. 177. Cs20n60f cs20n60p cs20n60w cs20n60v. Pdf size:703k _convert

cs20n60f,cs20n60p,nvertsuzhou convert semiconductor co ., ltd. Cs20n60w,cs20n60v600v n-channel mosfetfeatures fast switching 100% avalanche examined progressed dv/dt capabilityapplications switch mode energy deliver (smps) uninterruptible strength supply (ups) strength component correction (p. C)tool marking and package informationdevice bundle markingcs20n60f

0. 178. Hf20n60 hp20n60. Pdf size:3405k _haolin_elec

hf20n60,hp20n60600v n-channel mosfetfeatures fast switching a hundred% avalanche tested improved dv/dt capabilityapplications switch mode energy supply (smps) uninterruptible energy deliver (ups) electricity element correction (p. C)absolute maximum ratings tc = 25 until in any other case notedc,valueparameter image unitto-220to-220f/ drain-source voltage (vgs = 0v)

zero. 179. Ha20n60. Pdf size:3552k _haolin_elec

ha20n60600v n-channel mosfetfeatures speedy switching one hundred% avalanche testedbvdss = six hundred v progressed dv/dt capabilityrds(on) typ = zero. 34 1applications2id = 20 a3 switch mode energy deliver (smps)1. Gate 2. Drain 3. Source uninterruptible power deliver (ups) electricity component correction (%)tool marking and package informationdevice package marking.20n60 equivalent,

0. One hundred eighty. Lnc20n60 lnd20n60 lnb20n60. Pdf length:1196k _lonten

lnc20n60/ lnd20n60/lnb20n60lonten n-channel 600v, 20a energy mosfetdescription product summarythe power mosfet is fabricated the use of the v 600vdssadvanced planer vdmos era. The i 20adresulting tool has low conduction resistance, r zero.20n60 equivalent. 45ds(on),maxsuperior switching overall performance and excessive avalanche q 63. 7 ncg,typenergy. Capabilities low rds(on) low gate price

0. 181. Ssw20n60s ssa20n60s. Pdf length:1291k _cn_super_semi

outstanding-semi excellent-mosfet exceptional junction steel oxide semiconductor discipline effect transistor 600v brilliant junction energy transistor ss*20n60s rev. 1. 2 may additionally. 2018 www. Supersemi. Com. Cn september, 2013 sj-fet ssw20n60s/ssa20n60s 600v n-channel mosfet description functions sj-fet is new generation of high voltage mosfet circle of relatives that multi-epi manner sj-fet is making use of.20n60 equivalent,

zero. 182. Aot20n60. Pdf size:261k _inchange_semiconductor

isc n-channel mosfet transistor aot20n60featuresdrain modern i = 20a@ t =25d cdrain supply voltage-: v =600v(min)dssstatic drain-source on-resistance: r =0. 37(max)ds(on)one hundred% avalanche testedminimum lot-to-lot variations for robust deviceperformance and reliable operationdescriptiondesigned to be used in transfer mode energy elements and generalpurpos.20n60 equivalent,

zero. 183. Ixkp20n60c5. Pdf size:272k _inchange_semiconductor

isc n-channel mosfet transistor ixkp20n60c5featuresdrain cutting-edge i = 20a@ t =25d cdrain supply voltage-: v = 600v(min)dssstatic drain-supply on-resistance: r = 180m(max)ds(on)one hundred% avalanche testedminimum lot-to-lot versions for robust deviceperformance and reliable operationapplicationsswitched mode energy suppliesuninterruptible electricity suppli.20n60 equivalent,

0. 184. Spi20n60c3. Pdf size:215k _inchange_semiconductor

inchange semiconductorisc n-channel mosfet transistor spi20n60c3featureswith to-262(i2pak) packagelow input capacitance and gate chargehigh peak current capabilityimproved transconductance100% avalanche testedminimum lot-to-lot versions for robust deviceperformance and dependable operationapplicationsswitching applicationsabsolute maximum ratings(t =2

0. 185. Ixfm20n60. Pdf size:253k _inchange_semiconductor

isc n-channel mosfet transistor ixfm20n60featureswith to-3 packagelow input capacitance and gate chargelow gate input resistance100% avalanche testedminimum lot-to-lot versions for strong deviceperformance and dependable operationapplicationsswitching applicationsabsolute maximum scores(t =25)asymbol parameter price unitv drain-source voltage six hundred,20n60 equivalent.

0. 186. Spp20n60s5. Pdf size:246k _inchange_semiconductor

isc n-channel mosfet transistor

spp20n60s5ispp20n60s5featuresstatic drain-source on-resistance:rds(on) zero. 19enhancement modefast switching speed100% avalanche testedminimum lot-to-lot versions for strong deviceperformance and reliable operationdescriptionultra low gate chargeultra low effective capacitanceimproved transconductanceabsolut

0. 187. Spb20n60c3. Pdf size:258k _inchange_semiconductor

isc n-channel mosfet transistor spb20n60c3featureswith to-263(d2pak) packagelow input capacitance and gate chargelow gate enter resistance100% avalanche testedminimum lot-to-lot variations for sturdy deviceperformance and reliable operationapplicationsswitching applicationsabsolute maximum ratings(t =25)asymbol parameter price unitv drain-source vo

zero. 188. Spb20n60s5. Pdf size:204k _inchange_semiconductor

inchange semiconductorisc n-channel mosfet transistor spb20n60s5featureswith to-263( d2pak ) packaginghigh velocity switchinglow gate enter resistancestandard stage gate driveeasy to use100% avalanche testedminimum lot-to-lot versions for strong deviceperformance and dependable operationapplicationspower supplyswitching applicationsabsolute maxim

0. 189. Aotf20n60. Pdf length:252k _inchange_semiconductor

isc n-channel mosfet transistor aotf20n60featuresdrain modern i = 20a@ t =25d cdrain supply voltage-: v =600v(min)dssstatic drain-source on-resistance: r =0. 37(max)ds(on)one hundred% avalanche testedminimum lot-to-lot variations for sturdy deviceperformance and reliable operationdescriptiondesigned for use in switch mode energy materials and generalpurpo

0. 190. Spw20n60c3. Pdf length:269k _inchange_semiconductor

isc n-channel mosfet transistor spw20n60c3

ispw20n60c3featuresstatic drain-source on-resistance:rds(on)190menhancement mode:100% avalanche testedminimum lot-to-lot versions for robust deviceperformance and dependable operationdescritionhigh peak contemporary capabilityabsolute maximum rankings(t =25)asymbol parameter cost unitv drain-source voltage

zero. 191. Fmh20n60s1. Pdf size:321k _inchange_semiconductor

isc n-channel mosfet transistor fmh20n60s1featuresstatic drain-source on-resistance: r = 190m(max)ds(on)100% avalanche testedminimum lot-to-lot variations for robust deviceperformance and reliable operationapplicationdesigned to be used in transfer mode strength substances andgeneral purpose packages. Absolute maximum ratings(t =25)asymbol parameter cost unitv

0. 192. Spa20n60c3. Pdf size:201k _inchange_semiconductor

inchange semiconductorisc n-channel mosfet transistor spa20n60c3featuresnew progressive high voltage technologyultra low gate chargehigh peak cutting-edge capabilityimproved transconductance100% avalanche testedminimum lot-to-lot variations for strong deviceperformance and reliable operationapplicationsswitching applicationsabsolute maximum ratings(t =25,20n60 equivalent.

0. 193. Spw20n60cfd. Pdf size:245k _inchange_semiconductor

isc n-channel mosfet transistor spw20n60cfd, ispw20n60cfdfeaturesstatic drain-source on-resistance:rds(on)220menhancement mode:a hundred% avalanche testedminimum lot-to-lot versions for strong deviceperformance and dependable operationdescriptionhigh peak cutting-edge capabilityabsolute maximum scores(t =25)asymbol parameter price unitv drain-source volt

0. 194. Spp20n60c3. Pdf size:247k _inchange_semiconductor

isc n-channel mosfet transistor spp20n60c3ispp20n60c3featuresstatic drain-source on-resistance:rds(on) 0.20n60 equivalent. 19enhancement modefast switching speed100% avalanche testedminimum lot-to-lot variations for robust deviceperformance and reliable operationdescriptionultra low gate chargehigh top modern-day capabilityimproved transconductanceabsolute m

0. 195. Spw20n60s5. Pdf size:244k _inchange_semiconductor

isc n-channel mosfet transistor spw20n60s5ispw20n60s5featuresstatic drain-source on-resistance:rds(on)190menhancement mode:100% avalanche testedminimum lot-to-lot versions for strong deviceperformance and dependable operationdescritionimproved transconductanceabsolute maximum ratings(t =25)asymbol parameter value unitv drain-source voltage 60.20n60 equivalent,

0. 196. Fmp20n60s1. Pdf size:206k _inchange_semiconductor

inchange semiconductorisc n-channel mosfet transistor fmp20n60s1featureswith to-220 packaginglow switching losslow on-state resistanceeasy to use100% avalanche testedminimum lot-to-lot variations for strong deviceperformance and reliable operationzapplicationsswitching applicationsdc-dc convertersuninterruptible power supplyabsolute most ra.20n60 equivalent,

zero. 197. Aok20n60l. Pdf size:377k _inchange_semiconductor

isc n-channel mosfet transistor aok20n60lfeaturesdrain modern-day i = 20a@ t =25d cdrain source voltage-: v =600v(min)dssstatic drain-source on-resistance: r =zero. 37(max)ds(on)a hundred% avalanche testedminimum lot-to-lot variations for sturdy deviceperformance and reliable operationdescriptiondesigned to be used in transfer mode electricity substances and generalpurpo

zero. 198. Spa20n60cfd. Pdf size:199k _inchange_semiconductor

inchange semiconductorisc n-channel mosfet transistor spa20n60cfdfeatureswith to-220f packagelow input capacitance and gate chargelow gate input resistancereduced switching and conduction losses100% avalanche testedminimum lot-to-lot variations for robust deviceperformance and reliable operationapplicationsswitching applicationsabsolute maximum score

zero. 199. Fmv20n60s1. Pdf length:239k _inchange_semiconductor

isc n-channel mosfet transistor fmv20n60s1featureslow on-resistance:rds(on) zero. 19 (max)low switching loss100% avalanche testedminimum lot-to-lot versions for robust deviceperformance and reliable operationdescritionups (uninterruptible strength deliver)electricity conditioner systempower supplyabsolute maximum scores(t =25)asymbol parameter valu

0. 2 hundred. Spp20n60cfd. Pdf size:247k _inchange_semiconductor

isc n-channel mosfet transistor spp20n60cfdispp20n60cfdfeaturesstatic drain-source on-resistance:rds(on) zero. 22enhancement modefast switching speed100% avalanche testedminimum lot-to-lot versions for sturdy deviceperformance and reliable operationdescriptionultra low gate chargehigh peak modern capabilityabsolute maximum rankings(t =25)a20n60 equivalent,

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